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High Quality European GaN-Wafer on SiC Substrates for Space Applications (EuSiC)
Date du début: 1 nov. 2010, Date de fin: 31 oct. 2013,
...in this chain is a reliable source for high-quality 3 inch semi-insulating SiC substrates in Europe. The intention of this project is to improve the quality of semi-insulating SiC-substrates at SiCrystal AG, the leading manufacturer of SiC substrates in Europe. The provided substrates shall be analyzed and evaluated by epi-growth specialists IAF, III-V-Lab, and QinetiQ. Finally devices shall be bu ...
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