High Quality European GaN-Wafer on SiC Substrates .. (EuSiC)
High Quality European GaN-Wafer on SiC Substrates for Space Applications
Date du début: 1 nov. 2010,
Date de fin: 31 oct. 2013
The project „ High Quality European GaN-Wafer on SiC Substrates for Space Applications” (EuSiC) is aiming at establishing an independent, purely European sustainable supply chain for Gallium Nitride (GaN) based space technologies. The project will significantly reduce the dependence on critical technologies and capabilities from outside Europe for future space applications. An independent supply chain has to include countries of the European Community (EC): a supplier of high-quality semi-insulating Silicon Carbide (SiC) substrates, qualified sources to perform GaN epitaxial layers and as well manufacturers with leading knowledge in GaN device technology required e.g. for Monolithic Microwave Integrated Circuits (MMIC’s). At present, the missing link in this chain is a reliable source for high-quality 3 inch semi-insulating SiC substrates in Europe. The intention of this project is to improve the quality of semi-insulating SiC-substrates at SiCrystal AG, the leading manufacturer of SiC substrates in Europe. The provided substrates shall be analyzed and evaluated by epi-growth specialists IAF, III-V-Lab, and QinetiQ. Finally devices shall be built and verified on the created GaN epi-wafers by UMS. Continuous monitoring and several feedback loops to the quality of the substrates will enable an accelerated development at SiCrystal AG. Also impacts to improvement of the performance of GaN devices are expected. The project will complement activities already undertaken by European Space Agency ESA, who has assembled a consortium of competent partners under the: GaN Reliability Enhancement and Technology Transfer Initiative (GREAT2).
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