3 projets européens trouvés
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TERMINÉ
Technology CAD for III-V Semiconductor-based MOSFETs (III-V-MOS)
Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,
According to ITRS, III-V compound semiconductor n-type MOSFETs will reach production in 2018 as part of a new scaling scenario for high performance at very low voltage. The present lack of dependable TCAD models for the early stages of industrial development is a hindrance to benefit from the cost saves and time to market reduction that TCAD is recognized to deliver. To bridge this gap, III-V-M ...
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11
Participants partenaires
TERMINÉ
Energy Efficient Tunnel FET Switches and Circuits (E2SWITCH)
Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,
E2SWITCH focuses on Tunnel FET (TFETs) as most promising energy efficient device candidates able to reduce the voltage supply of integrated circuits (ICs) below 0.25V and make them significantly more energy efficient by exploiting strained SiGe/Ge and III-V platforms, with CMOS technological compatibility. A full optimization and DC/AC benchmarking for complementary n- and p-type TFETs, integrated ...
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11
Participants partenaires
TERMINÉ
Steep subthreshold slope switches\nfor energy efficient electronics (STEEPER)
Date du début: 1 juin 2010, Date de fin: 30 nov. 2013,
Description
European Union Research Initiative Aims to Increase
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to ...
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