Responsive Field-Effect Transistors: A Life-Long T.. (RESPONSIVE)
Responsive Field-Effect Transistors: A Life-Long Training Career Development action
Date du début: 1 avr. 2013,
Date de fin: 31 mars 2015
"RESPONSIVE will offer to a young researcher with an extraordinary track record, possessing a Ph.D in chemistry, a cross-disciplinary and supra-sectorial training and research experience in the field of organic electronics at the interface between supramolecular chemistry, solid state physics and electrical engineering in the emerging realms of materials- and nano-science. The overall mission is to train the fellow to become an independent scientist as well as to prepare him for a leading position in academia or industry.RESPONSIVE targets at developing a deep understanding of the underlying mechanisms ruling FETs performance, with a special focus on the control of novel properties and functions emerging from the bottom-up nanostructuration in blended active layers integrating photochromic molecules. In particular photochromic systems will be blended or chemisorbed as self-assembled monolayers (SAMs) at different interfaces (including functionalization of source and drain electrodes, functionalized gate dielectric substrates, etc.) to realise devices featuring switchable conductivity when exposed to different stimuli. Both planar interfaces such as the typical ones present in the devices (electrodes and dielectric substrate) and non-planar, i.e. those based on metallic or semiconducting nanoparticles (NPs) or nanorods (NRs), will be functionalized with responsive SAMs, to influence charge transport at nanoscale in the bulk of the active semiconducting layer. By combining chemical/physical tailoring of the different interfaces in the device, as well as the geometry and composition of the system (e.g. by changing concentration, size and shape of SAM coated NPs or NRs) and controlling its hierarchical self-assembly at multiple length scales, new and more efficient photoswitchable organic field-effect transistors (OFETs) will be realized, towards the development of multi-gating, thus multifunctional devices."
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