The OSIRIS proposal will address the crucial and ultimately strategic area for the future emerging nanoelectronics, i.e. how structures and devices actually will be fabricated as physical dimensions approaches a few nanometer minimum feature size. The project title is Open silicon based research platform for emerging devices and indicates that many of the future emerging devices will be based on a silicon fabrication base platform but may not be fully based on silicon as the active semiconductor material. Over the past 10 years this research team has established a versatile fabrication technology platform in excellent condition to open up a variety of new technologies to explore nanometer minimum feature size in realizable electrical repeatable devices structures.The proposed project has five different focus areas outlined. It covers a broad range of critical research issues that can be foreseen as groundbreaking topics for the period beyond 2015. the different topics addressed are;1) Three dimensional FET nanostructures based on SiNW and GeNW with advanced configuration.2) New applications of SiNW with build-in strain for fast silicon-base optoelectronic devices.3) Low frequency noise in advanced nanoelectronic structures4) THz devices for IR-detection5) Bio-sensor nanoelectronics for extreme bio-molecule sensitivity and real time detection of DNA.These areas are carefully chosen to assemble the right mix with predictable research success and with a few areas that can be called high gain/high risk. In particular we want to mention that focus area 2 and 4 have a great potential impact when successful but also at a certain higher risk for a more difficult implementation in future devices. There is in no cases any risk that the research will not generate high quality scientific results.