Graphene Based Radio Frequency Electronics (GrapheneRF)
Graphene Based Radio Frequency Electronics
Date du début: 1 avr. 2010,
Date de fin: 31 mars 2014
The specific aim of the present project is to initiate a research afford in collaboration with other European scientist to develop graphene based high performance thin film transistors (TFT) for radio frequency (RF) electronics. High performance TFTs operating at radio frequencies are of considerable interest in the area of thin film electronics. Amorphous silicon and organic semiconductors are widely used materials for recent designs. Due to the very limited electronic performance of these materials, thin film electronic circuits working at ultrahigh frequency range still remain as a technological challenge. Thus, new types of high performance semiconducting materials are of great interest for the recent research in this area. Extraordinary electronic properties together with the ability to be printed on large scales make graphene a promising candidate for these types of applications. Our long term goal is to develop a new graphene based technology for high frequency electronic applications.
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