4 projets européens trouvés
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TERMINÉ
Optimal SIC substR ates for Integrated Microwave and Power CircuitS (OSIRIS)
Date du début: 1 mai 2015, Date de fin: 30 avr. 2018,
OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in parti ...
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9
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TERMINÉ
Plastic Components for Advanced Microwave Equipment of New Generation SatCom PAyloads (PAMPA)
Date du début: 1 janv. 2015, Date de fin: 31 déc. 2016,
Plastic packaging solutions are foreseen as a good candidate to drastically reduce the cost of microwave equipment for future telecom satellite payloads. The objective of PAMPA project is to develop a plastic component technology, from the supply of the packaged microwave component with a reliability level compatible with space constraints up to its assembly on board using SMT (Surface Mount Techn ...
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6
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TERMINÉ
Space quaLification Of High-Power SSPA based on GaN technology (SLOGAN)
Date du début: 5 sept. 2013, Date de fin: 1 août 2016,
Next generation of Guidance Navigation Satellite Systems will require an increase in the available power of navigation signals at the receiver on ground. Current FOC Galileo satellites under development make use of TWTAs to provide an output power of nearly 200W (E1 band). Next generation of Galileo satellites will require higher output powers (2dB more) what implies a challenge in the design and ...
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6
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TERMINÉ
AlGaN and InAlN based microwave components (AL-IN-WON)
Date du début: 1 nov. 2010, Date de fin: 30 avr. 2014,
"This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.AL-IN-WON will explore two main disrupting routes:- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.- High effi ...
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