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Nano-Voids in Strained Silicon for Plasmonics (NoVoSiP)

Date du début: 1 sept. 2014, Date de fin: 31 août 2015,

The project aims at exploring the use of nanovoids and nanodots prepared as plasmonic structures to enhance the efficiency of Si single-crystalline photovoltaic (PV) devices. Fabrication and experimental investigation of plasmonic structures in strained Si/SiGe multilayered structures will be carried to enhance light harvesting in solar cells due to both near-field and far-field effects. The main ...
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