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9 projets européens trouvés

Recherche sur 125080 projets européens

 TERMINÉ 
...rame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remained for long period a real advantage in terms of scalability regarding the reduced diameter of hexagonal SiC wafer commercially available. Even the ...
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 14

 TERMINÉ 

Green Electronics with Diamond Power Devices (GreenDiamond)

Date du début: 1 mai 2015, Date de fin: 30 avr. 2019,

The key to the efficient transmission and conversion of low-carbon electrical energy is the improvement of power electronic devices. Diamond is considered to be the ultimate wide bandgap semiconductor material for applications in high power electronics due to its exceptional thermal and electronic properties. Two recent developments - the emergence of commercially available electronic grade single ...
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 15

 TERMINÉ 

Power Semiconductor and Electronics Manufacturing 4.0 (SemI40)

Date du début: 1 mai 2016, Date de fin: 30 avr. 2019,

...tainable, and integrated ECS manufacturing. SemI40 will further pave the way for serving highly innovative electronic markets with products powered by microelectronics “Made in Europe”. Positioned as an Innovation Action it is the high ambition of SemI40 to implement technical solutions on TRL level 4-8 into the pilot lines of the industry partners. Challenging use cases will be implemented in re ...
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 38

 TERMINÉ 

European 450mm Equipment Demo Line (E450EDL)

Date du début: 1 oct. 2013, Date de fin: 30 sept. 2016,

The aim of the E450EDL project is to continue the engagement of the European semiconductor equipment and materials industry in the 450mm wafer size transition that started with the ENIAC JU EEMI450 initiative and proceeded with subsequent projects funded with public money, amongst others NGC450, SOI450, EEM450PR. The demo line resulting from this project will be such that it will enable first crit ...
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 44

 TERMINÉ 

Pilot Lines for Advanced CMOS EmbodimentS in 2x nodes, Built in Europe (PLACES2BE)

Date du début: 3 déc. 2012, Date de fin: 31 déc. 2015,

Objectives: The general goal of this project is the industrialization of 28/20nm Fully Depleted (FD) Silicon On Insulator (SOI) Technology platforms, enabling 2 different sources in 2 different European countries. The project also aims at establishing and reinforcing a design ecosystem in Europe using these platforms. Last, the project considers extremely important to explore extension towards FD ...
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 22

 TERMINÉ 
Description Among the physical limitations which challenge progress in nanoelectronics for aggressively scaled More Moore, Beyond CMOS and advanced More-than-Moore applications, process variability and the interactions between and with electrical, thermal and mechanical effects are getting more and more critical. Effects from various sources ...
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 9

 TERMINÉ 

Advanced TEchnology MOdelling for eXtra-functionality devices (ATEMOX)

Date du début: 1 juil. 2010, Date de fin: 30 nov. 2013,

Description Extends the capabilities of TCAD to the modelling of leakage currents and technologies for low-leakage ultra-shallow junctions.Within previous European projects process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technolog ...
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 14

 TERMINÉ 

Semiconductor Equipment Assessment Leveraging Innovation (SEAL)

Date du début: 1 juin 2010, Date de fin: 30 sept. 2013,

Description Seal is an EC-funded project covering semiconductor equipment assessment to strengthen the European semiconductor equipment industry. SEAL is an integrated project consisting of 17 equipment assessment sub-projects in the area of semiconductor manufacturing equipment. The assessment th ...
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 39

 TERMINÉ 

European 450mm Equipment & Materials Initiative (EEMI 450)

Date du début: 1 avr. 2010, Date de fin: 1 mars 2013,

Large-scale semiconductor fabrication is now standardised on 300mm diameter wafers. However, as demand grows and node dimensions diminish, major chipmakers are considering offsetting the growing costs of miniaturisation by increasing wafer size to 450mm to cut cost per produced die. A prerequisite is the availability of the required quality wafers and equipment able to handle larger wafers. The EN ...
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 27