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Technology CAD for III-V Semiconductor-based MOSFETs (III-V-MOS)

Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,

According to ITRS, III-V compound semiconductor n-type MOSFETs will reach production in 2018 as part of a new scaling scenario for high performance at very low voltage. The present lack of dependable TCAD models for the early stages of industrial development is a hindrance to benefit from the cost saves and time to market reduction that TCAD is recognized to deliver. To bridge this gap, III-V-M ...
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