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Compound Semiconductors for 3D integration (COMPOSE3)
Date du début: 1 nov. 2013, Date de fin: 31 oct. 2016,
COMPOSE3 aims to develop 3D stacked circuits in the front end of line of Complementary Metal Oxide Semiconductor (CMOS) technology, based on high mobility channel materials. The final objective is a 3D stacked SRAM cell, designed with gates length taken from the 14nm technology node. This technology will provide a new paradigm shift in density scaling combined with a dramatic increase in the power ...
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