Rechercher des projets européens

According to ITRS, III-V compound semiconductor n-type MOSFETs will reach production in 2018 as part of a new scaling scenario for high performance at very low voltage. The present lack of dependable TCAD models for the early stages of industrial development is a hindrance to benefit from the cost saves and time to market reduction that TCAD is recognized to deliver. To bridge this gap, III-V-M ...