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Float zone silicon from electron beam grown rods (EBFZ)

Date du début: 1 oct. 2016, Date de fin: 31 mars 2017,

For the first time a technology for skull (cold crucible) growth of high purity silicon rods of high diameter, which can be used for float zone (FZ) single crystal growth, is developped. This technology enhances economical efficiency of FZ method compared to abandunt use of FZ rods obtained in Siemens process and for the first time enables FZ secondary silicon recycling inside FZ process. As a res ...
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