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 TERMINÉ 

Radiation Hard Resistive Random-Access Memory (R2RAM)

Date du début: 1 janv. 2015, Date de fin: 31 déc. 2016,

The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is ab ...
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 4

 TERMINÉ 

Development of Rad Hard non volatile Flash memories for space applications (SkyFlash)

Date du début: 1 sept. 2011, Date de fin: 28 févr. 2014,

The project aims to realise a strong methodology for the development and design of non volatile memories usign standard CMOS silicon process actually used for consumer electronics. Since standard silicon memories, such as other silicon devices for consumer market, fails under irradiation two different approaches are envisaged: the first one is to develop specific technological processes able to su ...
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