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TERMINÉ
3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE)
Date du début: 1 janv. 2017, Date de fin: 31 déc. 2020,
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remai ...
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14
Participants partenaires
TERMINÉ
Training NETwork on Functional Interfaces for SiC (NETFISIC)
Date du début: 1 févr. 2011, Date de fin: 31 janv. 2015,
...onsortium is mainly composed (11 out of 12) of the members of the presently running Marie Curie RTN ""MANSiC"" (MRTN-CT-2006-035735). The 12 partners of NetFISiC include 3 companies (SiCED, ACREO and NOVASiC). One associated partner (LIP company) will complement the consortium by providing key training offer and administrative/management assistance. Obviously NetFISiC network will be efficient fro ...
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