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Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology (DOTSEVEN)
Date du début: 1 oct. 2012, Date de fin: 30 juin 2016,
DOTSEVEN is a 3.5 year IP proposal for a very ambitious R&D project targeting the development of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technologies with cut-off frequencies (fmax) of around 700 GHz. Special attention will be paid to clearly demonstrate the capabilities and benefits of this technology with benchmark circuits and advanced system applications in the 0.1 to ...
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