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 TERMINÉ 
Power electronics is the key technology to control the flow of electrical energy between source and load for a wide variety of applications from the GWs in energy transmission lines, the MWs in datacenters that power the internet to the mWs in mobile phones. Wide band gap semiconductors such as GaN use their capability to operate at higher voltages, temperatures, and switching frequencies with gr ...
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 11

 TERMINÉ 

Innovative Reliable Nitride based Power Devices and Applications (InRel-NPower)

Date du début: 1 janv. 2017, Date de fin: 31 déc. 2019,

The main objective of this proposal is to develop reliable GaN-based power devices and systems for high and medium power electronics targeting industrial and automotive applications and bringing the GaN power devices another step towards the wide usability in the energy saving environment to further tap the full potential which this new material brings along.This proposal addresses two subjects, o ...
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 11

 TERMINÉ 
The key objective of PowerBase “Enhanced substrates and GaN pilot lines enabling compact power applications” is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment grow ...
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 40

 TERMINÉ 

Energy Efficient Converters using GaN Power Devices (E2COGAN)

Date du début: 1 avr. 2013, Date de fin: 31 mars 2016,

The E2COGaN project will target the demonstration of GaN-on-Si as a disruptive power device technology platform through the whole value chain up to demonstrators with high industrial, societal and environmental relevance. Its innovative character will be proven through a well-balanced and application specific trade-off between the “corner” benefits given by higher efficiency, higher switching freq ...
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 25

 TERMINÉ 
Highly efficient power electronics is needed for low volume and low weight future power conversion systems. The proposed project aims for the exploitation of novel gallium nitride (GaN) transistors for advanced switched power supplies. High voltage normally-off GaN power devices on Si substrates in vertical device architecture will be developed and its technology transferred to an European industr ...
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 9