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TERMINÉ
Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology (DOTSEVEN)
Date du début: 1 oct. 2012, Date de fin: 30 juin 2016,
DOTSEVEN is a 3.5 year IP proposal for a very ambitious R&D project targeting the development of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technologies with cut-off frequencies (fmax) of around 700 GHz. Special attention will be paid to clearly demonstrate the capabilities and benefits of this technology with benchmark circuits and advanced system applications in the 0.1 to ...
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TERMINÉ
Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology (DOTFIVE)
Date du début: 1 févr. 2008, Date de fin: 31 juil. 2011,
DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a giv ...
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