4 projets européens trouvés
Recherche sur 125080 projets européens
TERMINÉ
Dependable Embedded Wireless Infrastructure (DEWI)
Date du début: 1 mars 2014, Date de fin: 28 févr. 2017,
DEWI (dependable embedded wireless infrastructure) envisions to significantly foster Europe’s leading position in embedded wireless systems and smart (mobile) environments such as vehicles, railway cars, airplanes and buildings. These environments comprise wireless sensor networks and wireless applications for citizens and professional users. Therefore the consortium introduces the concept of a “s ...
Voir le projet
61
Participants partenaires
TERMINÉ
Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology (DOTSEVEN)
Date du début: 1 oct. 2012, Date de fin: 30 juin 2016,
DOTSEVEN is a 3.5 year IP proposal for a very ambitious R&D project targeting the development of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technologies with cut-off frequencies (fmax) of around 700 GHz. Special attention will be paid to clearly demonstrate the capabilities and benefits of this technology with benchmark circuits and advanced system applications in the 0.1 to ...
Voir le projet
17
Participants partenaires
TERMINÉ
Quantifying projected impacts under 2°C warming (IMPACT2C)
Date du début: 1 oct. 2011, Date de fin: 30 sept. 2015,
Political discussions on the European goal to limit global warming to 2°C demands that discussions are informed by the best available science on projected impacts and possible benefits. IMPACT2C enhances knowledge, quantifies climate change impacts, and adopts a clear and logical structure, with climate and impacts modelling, vulnerabilities, risks and economic costs, as well as potential respons ...
Voir le projet
29
Participants partenaires
TERMINÉ
Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology (DOTFIVE)
Date du début: 1 févr. 2008, Date de fin: 31 juil. 2011,
DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a giv ...
Voir le projet