3 projets européens trouvés
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TERMINÉ
3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE)
Date du début: 1 janv. 2017, Date de fin: 31 déc. 2020,
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remai ...
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14
Participants partenaires
TERMINÉ
Optimal SIC substR ates for Integrated Microwave and Power CircuitS (OSIRIS)
Date du début: 1 mai 2015, Date de fin: 30 avr. 2018,
OSIRIS project, a Research and Innovation Action (RIA), aims at improving substantially the cost effectiveness and performance of gallium nitride (GaN) based millimetre wave components. The project proposes to elaborate innovative SiC material using isotopic sources. This material will offer thermal conductivity improvement of 30% which is important for devices dissipating a lot of power, in parti ...
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9
Participants partenaires
TERMINÉ
Silicon Carbide Power Technology for Energy Eficient Devices (SPEED)
Date du début: 1 janv. 2014, Date de fin: 31 déc. 2017,
"Highly efficient Power Electronics (PE) employed in power generation, transmission, and distribution is the prerequisite for the Europe-wide penetration of renewable energies; improves the energy efficiency; increases the power quality and enables continuous voltage regulation, reactive power compensation and automated distribution. It also facilitates the integration of distributed resources lik ...
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