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TERMINÉ
3C-SiC Hetero-epitaxiALLy grown on silicon compliancE substrates and 3C-SiC substrates for sustaiNable wide-band-Gap powEr devices (CHALLENGE)
Date du début: 1 janv. 2017, Date de fin: 31 déc. 2020,
Silicon carbide presents a high breakdown field (2-4 MV/cm) and a high energy band gap (2.3–3.2 eV), largely higher than for silicon. Within this frame, the cubic polytype of SiC (3C-SiC) is the only one that can be grown on a host substrate with the huge opportunity to grow only the silicon carbide thickness required for the targeted application. The possible growth on silicon substrate has remai ...
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TERMINÉ
Development of a new disruptive semiconductor technology to produce more efficient, smaller, lighter, and more robust power switches. (3C-SiC Si)
Date du début: 1 juin 2016, Date de fin: 30 sept. 2016,
Anvil Semiconductors has developed a unique technology to enable the production of Silicon Carbide (SiC) power switches at a similar cost to conventional Silicon by growing thin layers of SiC by heteroepitaxy on Silicon wafers rather than using expensive bulk SiC substrates. This innovation enables wafer costs to be reduced by a factor of 20 and opens up the possibility of fabricating SiC devices ...
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