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10 projets européens trouvés

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 TERMINÉ 

Graphene-based disruptive technologies (GrapheneCore1)

Date du début: 1 avr. 2016, Date de fin: 31 mars 2018,

This project is the second in the series of EC-financed parts of the Graphene Flagship. The Graphene Flagship is a 10 year research and innovation endeavour with a total project cost of 1,000,000,000 euros, funded jointly by the European Commission and member states and associated countries. The first part of the Flagship was a 30-month Collaborative Project, Coordination and Support Action (CP-CS ...
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 158

 TERMINÉ 

"Graphene Layers: Production, Characterization and Integration" (GLADIATOR)

Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,

"GLADIATOR (Graphene Layers: Production, Characterization and Integration) will enable the scalable production of cheaper, higher quality and larger area graphene sheets. The project will achieve this by optimizing the performance of CVD graphene (using doping), by increasing the throughput and size of CVD batch reactors, and by improving the process by which graphene is transferred for the CVD ca ...
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 16

 TERMINÉ 

Nanoelectronics based on two-dimensional dichalcogenides (MoWSeS)

Date du début: 1 mars 2013, Date de fin: 28 févr. 2017,

Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the wayto electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues ofgraphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materi ...
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 8

 TERMINÉ 

Graphene-Based Revolutions in ICT And Beyond (GRAPHENE)

Date du début: 1 oct. 2013, Date de fin: 31 mars 2016,

This Flagship aims to take graphene and related layered materials from a state of raw potential to a point where they can revolutionize multiple industries – from flexible, wearable and transparent electronics, to new energy applications and novel functional composites.Our main scientific and technological objectives in the different tiers of the value chain are to develop material technologies fo ...
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 154

 TERMINÉ 

GaN-based normally-off high power switching transistor for efficient power converters (HiPoSwitch)

Date du début: 1 sept. 2011, Date de fin: 28 févr. 2015,

Highly efficient power electronics is needed for low volume and low weight future power conversion systems. The proposed project aims for the exploitation of novel gallium nitride (GaN) transistors for advanced switched power supplies. High voltage normally-off GaN power devices on Si substrates in vertical device architecture will be developed and its technology transferred to an European industr ...
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 9

 TERMINÉ 

"European Research Training Network of “New Materials: Innovative Concepts for their Fabrication, Integration and Characterization”" (ENHANCE)

Date du début: 1 oct. 2009, Date de fin: 30 sept. 2013,

"The multi-site European initial training network – “ENHANCE” – “New Materials: Innovative Concepts for their Fabrication, Integration and Characterization” will be established to deal with the mid and long term issues of concern to the European industry encompassing the whole spectrum of functional materials for microelectronics, nano-electronics, data storage, photovoltaic, with emphasis on emer ...
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 8

 TERMINÉ 

Multi-APprOach for high efficiency integrated and inteLLigent cONcentrating PV modules (Systems) (APOLLON)

Date du début: 1 juil. 2008, Date de fin: 30 juin 2013,

"APOLLON proposal concerns the optimisation and development of Point focus and Mirror Based Spectra Splitting photovoltaic concentrating (CPV) systems (multi-approach). The different technology paths will be followed with due focalisation on the recognised critical issues related to each system component in order to increase CPV efficiency, assure reliability, reduce cost and environmental impact. ...
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 18

 TERMINÉ 

European 450mm Equipment & Materials Initiative (EEMI 450)

Date du début: 1 avr. 2010, Date de fin: 1 mars 2013,

Large-scale semiconductor fabrication is now standardised on 300mm diameter wafers. However, as demand grows and node dimensions diminish, major chipmakers are considering offsetting the growing costs of miniaturisation by increasing wafer size to 450mm to cut cost per produced die. A prerequisite is the availability of the required quality wafers and equipment able to handle larger wafers. The EN ...
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 27

 TERMINÉ 

High quality Material and intrinsic Properties of InN and indium rich Nitride Alloys - (The RAINBOW ITN) (RAINBOW)

Date du début: 1 oct. 2008, Date de fin: 30 sept. 2012,

"Indium nitride is a new narrow gap semiconductor (
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 14

 TERMINÉ 

Dual-channel CMOS for (sub)-22 nm high performance logic (DUALLOGIC)

Date du début: 1 déc. 2007, Date de fin: 31 mai 2011,

We propose to develop for the first time a dual-channel CMOS technology comprising high channel mobility (high-µ) Ge pMOS and III-V compound semiconductor nMOS transistors co-integrated on the same complex engineered substrate on Si. This offers a high performance booster as an option for the 22 nm technology creating competitive advantage for the European nanoelectronics industry. In addition, hi ...
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 9