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Silicon at the Atomic and Molecular scale (SiAM)

Date du début: 1 oct. 2013, Date de fin: 30 sept. 2016,

SiAM aims at exploiting in future ICT devices and circuits the atomic nature of dopants used throughout microelectronics. The key idea is to use the very sharp, deep and reproducible potential created by a dopant in a semiconductor host crystal. Despite its small size (on the scale of the Bohr radius), the donor state of a single dopant can be addressed with conventional lithography techniques, an ...
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