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32 projets européens trouvés

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 TERMINÉ 

Nanophotonic Nanomechanical Mass Spectrometry for Biology and Health (ENLIGHTENED)

Date du début: 1 juin 2014, Date de fin: 31 mai 2019,

"« Mass Spectrometry has become a routine analytical tool in modern biological research, and has gained in recent years a foothold in the realm of clinical diagnostic and screening. However, it is still costly, complex and because its principle relies on ionization, it is incapable of analyzing biomolecules with masses greater than a few MDa. Averaging more than 100 million particles per measureme ...
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 1

 TERMINÉ 

Single active dopant detection in semiconductor nanowires using electron holography (Holoview)

Date du début: 1 déc. 2012, Date de fin: 30 nov. 2017,

"The end of ""happy scaling"" in the semiconductor industry has lead to innovation being a key parameter in nanoelectronics. Doped nanowires of all types of sizes, shapes and composition are now used as components to build nano-electronic devices, light sources, detectors and for photovoltaic applications. As these devices are reduced in size, the location of individual dopant atoms becomes more i ...
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 1

 TERMINÉ 

Semiconductor Equipment Assessment for Key Enabling Technologies (SEA4KET)

Date du début: 1 nov. 2013, Date de fin: 31 oct. 2016,

SEA4KET (Semiconductor Equipment Assessment for Key Enabling Technologies) is an IP proposal taking the consequent step from equipment R&D to equipment assessment experiments. The strategic objective is to effectively combine resources and expertise in a joint assessment of novel equipment for key enabling technologies to foster and accelerate the successful transfer of novel European equipment in ...
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 26

 TERMINÉ 

Compound Semiconductors for 3D integration (COMPOSE3)

Date du début: 1 nov. 2013, Date de fin: 31 oct. 2016,

COMPOSE3 aims to develop 3D stacked circuits in the front end of line of Complementary Metal Oxide Semiconductor (CMOS) technology, based on high mobility channel materials. The final objective is a 3D stacked SRAM cell, designed with gates length taken from the 14nm technology node. This technology will provide a new paradigm shift in density scaling combined with a dramatic increase in the power ...
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 10

 TERMINÉ 

Automotive Tested High Voltage and Embedded Non-Volatile Integrated System on Chip platformemploying 3D Integration (ATHENIS_3D)

Date du début: 1 nov. 2013, Date de fin: 31 oct. 2016,

Automotive represents 12% of the EU industrial GDP. 20% of the value of a car is already electronics and 10% of this are IC components. Minimizing costs and space for additional functionality requires further integration. The EU project ATHENIS has successfully addressed System-on-Chip (SoC) integration of CMOS, high voltage and embedded memory for harshest automotive conditions. Further cost redu ...
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 11

 TERMINÉ 

Computational Lithography for Directed Self-Assembly: Materials, Models and Processes (CoLiSA.MMP)

Date du début: 1 nov. 2013, Date de fin: 31 oct. 2016,

Directed self-assembly (DSA) of block copolymers is one of the most promising techniques to enable the continued miniaturization of ICs and to boost the performance in More Moore. It combines top-down photolithography for creation of guiding patterns with engineered new materials and processes to facilitate cost effective bottom-up techniques for pattern density multiplication and defect rectifica ...
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 7

 TERMINÉ 

Coordination Action to enable an effective European 450 mm Equipment & Materials Network (ENABLE450)

Date du début: 1 nov. 2012, Date de fin: 31 oct. 2016,

5 major global semiconductor companies Intel, Samsung, TSMC, IBM and Global Foundries, have decided to work closely together to bring 450 mm semiconductor processing to a mature level, within a consortium called G450C. This operation, based in Albany N.Y., is currently ordering and installing the first wave of 450 mm systems. The major drivers of this effort are Intel and TSMC, which have provide ...
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 13

 TERMINÉ 

NINE-AXIS INERTIAL SENSOR BASED ON PIEZORESISTIVE NANO-GAUGE DETECTION (NIRVANA)

Date du début: 1 sept. 2011, Date de fin: 29 févr. 2016,

With the recent introduction of MEMS in consumer applications (mobile phone, gaming...) the market for low cost and low power consumption multi-axis inertial sensors has boomed over the last five years. These sensors have generated huge business opportunities, with $M.1900 revenues in 2009 at the MEMS level. Beyond consumer applications, there are many other growing mass market applications like I ...
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 6

 TERMINÉ 

Terahertz Photonic Imager on Chip (TeraTOP)

Date du début: 1 oct. 2011, Date de fin: 30 juin 2015,

The impressive developments in the field of electronic imaging based on CMOS Imagers have generated worldwide enormous business opportunities, with revenues of more than $4B in 2009 at the component level alone. Today such Imagers almost solely address the visible and near-infrared part of the electromagnetic spectrum. Many applications would profit from affordable and reliable Imagers for the ter ...
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 8

 TERMINÉ 

Atomic Scale and single Molecule Logic gate Technologies (AtMol)

Date du début: 1 janv. 2011, Date de fin: 31 déc. 2014,

AtMol will establish comprehensive process flow for fabricating a molecular chip, i.e. a molecular processing unit comprising a single molecule connected to external mesoscopic electrodes with atomic scale precision and preserving the integrity of the gates down to the atomic level after the encapsulation. Logic functions will be incorporated in a single molecule gate, or performed by a single sur ...
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 11

 TERMINÉ 

DESIGN AND ELABORATION OFMULTI-PHYSICS INTEGRATED NANOSYSTEMS (DELPHINS)

Date du début: 1 nov. 2009, Date de fin: 31 oct. 2014,

The innovation of DELPHINS application will consist in building a generic multi-sensor design platform for embedded multi-gas-analysis-on-chip, based on a global modelling from the individual NEMS sensors to a global multiphysics NEMS-CMOS VLSI (Very large Scale Integration) system. The latter constitute a new research field with many potential applications such as in medicine (specific diseases r ...
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 1

 TERMINÉ 

Energy Storage with lowered cost and improved Safety and Reliability for electrical vehicles (ESTRELIA)

Date du début: 1 mai 2011, Date de fin: 31 oct. 2014,

High costs together with concerns for driving range, reliability and safety are still the main hindrance for market adaption of full electrical vehicles (FEVs). ESTRELIA aims to provide building blocks with enhanced reliability and safety at lowered costs for smart energy storage for FEVs.This is accomplished by proposing a modular approach with ultracapacitor power packs with higher density with ...
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 9

 TERMINÉ 

GRaphenE for NAnoscaleD Applications (GRENADA)

Date du début: 1 janv. 2011, Date de fin: 31 déc. 2013,

The semiconductor industry has been able to improve the performance of electronic system by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring alternative device technologies. Carbon-based nano-electronic is currently investigated. Discovered recently, the graphene is rapidly raising star on the horiz ...
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 8

 TERMINÉ 

Steep subthreshold slope switches\nfor energy efficient electronics (STEEPER)

Date du début: 1 juin 2010, Date de fin: 30 nov. 2013,

Description European Union Research Initiative Aims to Increase 
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to ...
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 14

 TERMINÉ 

Semiconductor Equipment Assessment Leveraging Innovation (SEAL)

Date du début: 1 juin 2010, Date de fin: 30 sept. 2013,

Description Seal is an EC-funded project covering semiconductor equipment assessment to strengthen the European semiconductor equipment industry. SEAL is an integrated project consisting of 17 equipment assessment sub-projects in the area of semiconductor manufacturing equipment. The assessment th ...
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 39

 TERMINÉ 

Silicon Quantum Wire Transistors (SQWIRE)

Date du début: 1 sept. 2010, Date de fin: 31 août 2013,

Description SQWIRE develops industry compatible CMOS technology based on novel Si nanowire transistor structures.The aim of the SQWIRE project is to develop a disruptive, industry-compatible CMOS technology based on novel silicon nanowire transistor structures. As has been demonstrated both theoretically and experimentally, nanowire MOS t ...
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 10

 TERMINÉ 

Beyond CMOS Nanodevices for Adding Functionalities\nto CMOS (NANOFUNCTION)

Date du début: 1 sept. 2010, Date de fin: 31 août 2013,

Description NANOFUNCTION addresses the merging of advanced More than Moore (MtM) devices with Beyond-CMOS. Topics: Si nanowires for sensing, on-chip energy harvesting, nano-cooling and porous Si for RF passives.The NANOFUNCTION project aims to integrate at the European level the excellent European research laboratories in order to strengt ...
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 21

 TERMINÉ 

MEMS and Liquid Crystal based, Agile Reflectarray Antennas for Security and COMunication (ARASCOM)

Date du début: 15 mai 2008, Date de fin: 14 nov. 2012,

ARASCOM OBJECTIVESOur project is focused on Research & Development for efficient use of micro-nano devices as basis of agile antennas with moderate cost, that are more and more required in advanced systems for Communication, Safety and Security. We will assess this until representative prototypes at a very large and innovative level:·\tvery large because the developed agile "reflectarray" antennas ...
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 9

 TERMINÉ 

Nanopatterning, Production and Applications based on Nanoimprinting Lithography (NaPANIL)

Date du début: 1 mai 2008, Date de fin: 30 avr. 2012,

The NaPANIL project aims to develop processes, materials and tools, both for manufacturing and for control, for truly 3-dimensional nanosurfaces with feature dimensions ranging from 50 nm to several m. The nanosurfaces will be realised using various variants of nanoimprinting lithography. The dedicated application is to control light at nanostructured surfaces and a few potential high impact prod ...
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 19

 TERMINÉ 

Hybrid Nano-Electro-Mechanical / Integrated Circuit Systems for Sensing and Power Management Applications (NEMSIC)

Date du début: 1 juin 2008, Date de fin: 31 mars 2012,

NEMSIC addresses the future intelligent sensor and actuator systems in which solid-state semiconductor micro/nanodevices and micro/nano-mechanical devices are co-integrated for new functionalities and increased performance.The project proposes the exploration and development of low power sensing micro/nanosystems based on Nano-Electro-Mechanical (NEM) structures integrated on a Silicon-On-Insulato ...
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 10

 TERMINÉ 

Nano-scale ICT Devices and Systems Coordination Action (NanoICT)

Date du début: 1 janv. 2008, Date de fin: 31 déc. 2011,

In the semiconductor industry, CMOS technology will certainly continue to have a predominant market position in the future. However, there are still a number of technological challenges, which have to be tackled if CMOS downscaling should be pursued until feature sizes will reach 10 nm around the year 2015-2020.The NanoICT Coordination Action activities will reinforce and support the whole Europea ...
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 13

 TERMINÉ 

Extended Large (3D) Integration TEchnology (ELITE)

Date du début: 1 nov. 2007, Date de fin: 31 août 2011,

Description 3-D integration in high performance digital systems For developing complex next-generation chips which include a combination of disparate technologies, the circuit integration exclusively in two dimensions has proved to be a seriously limiting factor. Utilising the third dimension for ...
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 6

 TERMINÉ 

European platform for low-power applications on Silicon-on-Insulator Technology (EUROSOI+)

Date du début: 1 janv. 2008, Date de fin: 30 juin 2011,

Description EUROSOI+ is a CSA project that upgrade the European network on silicon-on-insulator technology set up by the EUROSOI project.     In the framework of FP6, the European Commission supported the formation of a European Network on Silicon on Insulator Technology, Devices and Circuits, whose main goal was to create a discussion fo ...
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 9

 TERMINÉ 

Graphene-based Nanoelectronic Devices (GRAND)

Date du début: 1 janv. 2008, Date de fin: 30 juin 2011,

The semiconductor industry is a cornerstone of today's high-tech economy, supporting over 100,000 direct and even more indirect jobs in Europe. This position has been achieved through continued miniaturization in complementary metal-oxide-semiconductor (CMOS) technology, which will only last for a maximum 10-15 more years. In line with its Lisbon Strategy, the EC has identified an urgent need to a ...
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 8

 TERMINÉ 

Dual-channel CMOS for (sub)-22 nm high performance logic (DUALLOGIC)

Date du début: 1 déc. 2007, Date de fin: 31 mai 2011,

We propose to develop for the first time a dual-channel CMOS technology comprising high channel mobility (high-µ) Ge pMOS and III-V compound semiconductor nMOS transistors co-integrated on the same complex engineered substrate on Si. This offers a high performance booster as an option for the 22 nm technology creating competitive advantage for the European nanoelectronics industry. In addition, hi ...
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 9

 TERMINÉ 

Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (NANOSIL)

Date du début: 1 janv. 2008, Date de fin: 31 mars 2011,

NANOSIL Network of Excellence aims to integrate at the European level the excellent European research laboratories and capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs) and disseminate the results in a wide scientific and industrial community.NANOSIL will explore and assess the sc ...
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 38

 TERMINÉ 

Combined Organic LED Technology for Large Area Transparent and low cost lighting Applications (CombOLED)

Date du début: 1 janv. 2008, Date de fin: 28 févr. 2011,

Solid state lighting is a fascinating research field which brought up the revolutionary breakthrough technology of inorganic LEDs during the last decade. These are now migrating into the general lighting field. A new development route is already identified with organic light emitting devices in large area and nm-thin architectures being complementary to inorganic point sources.These organic light- ...
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 7

 TERMINÉ 

MAsk less lithoGraphy for IC manufacturing (MAGIC) (MAGIC)

Date du début: 1 janv. 2008, Date de fin: 31 déc. 2010,

Description MAGIC has supported the development of e-beam based maskless lithography technology in Europe: Two parallel lithography tool developments for 32nm CMOS and beyond and on lithography infrastructure.In the CMOS manufacturing environment, the mask-based optical lithography technique is up to now driving solution to deal with all ...
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 19

 TERMINÉ 

Active Matrix of Any Shape with Organic Light Emitting Diodes displays (AMAzOLED)

Date du début: 1 janv. 2008, Date de fin: 31 déc. 2010,

The target of project is to develop a highly reliable high brightness conformable low cost up scalable display for demanding applications such as their use in cars, aircraft or extreme sports applications. For the time being, in these applications, the LCD is the main display technology. Although its performances are appropriate in such difficult environments, designers are looking for a solution ...
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 6

 TERMINÉ 

Pan-European Reseach Infrastructure for Nano-Structures (PRINS)

Date du début: 1 avr. 2008, Date de fin: 31 mars 2010,

The project focuses on all needed preparatory actions to enable in the following phase the construction of a Research Infrastructure (RI) called Pan-European Research Infrastructure for Nano-Structures (PRINS), with the aim of enabling European innovative research for the ultimate scaling of electronics component and circuits. The platform will be truly interdisciplinary by allowing the convergenc ...
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 10

 TERMINÉ 

Material Development for Double exposure and Double patterning (MD3)

Date du début: 1 déc. 2007, Date de fin: 30 nov. 2009,

Double patterning lithography has been identified as one of the most promising solutions for the 32nm node patterning. This technique refers to a two step process where a first pattern is exposed, developed and sometimes etched and a second pattern is also exposed, developed and transferred on the top of the first one. For the moment, several issues still need to be addressed for enabling the Doub ...
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 7

 TERMINÉ 

MNT Europe Extension (MNTEE)

Date du début: 1 janv. 2008, Date de fin: 31 déc. 2008,

The FP6/Infrastructure project MNT-Europe (RII3-CT-2004-506231) has led to the creation of a unique distributed platform for research and development in the field of Micro and Nano Technologies (MNT), based on the national facilities of Léti (F), CSEM (CH), IZM-M and IISB Fraunhofer (D), IMEC (B) and Tyndall (Ir) research institutes. The networking and Joint Research Activities performed during t ...
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 8