18 projets européens trouvés
Recherche sur 125080 projets européens
TERMINÉ
NanoElectronics Roadmap for Europe: Identification and Dissemination (NEREID)
Date du début: 16 nov. 2015, Date de fin: 15 nov. 2018,
The objective of this project is to elaborate a new roadmap for Nanoelectronics, focused on the requirements of European semiconductor and applications industry, and the advanced concepts developed by Research centers in order to achieve an early identification of promising novel technologies, and cover the R&D needs all along the innovation chain.The final result will be a roadmap for European mi ...
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14
Participants partenaires
TERMINÉ
Preparing R2 extension to 300mm for BCD Smart Power (R2POWER300)
Date du début: 1 juil. 2015, Date de fin: 30 juin 2018,
R2POWER300 is committed to challenge the following Objectives: • Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing) • Energy Efficiency and CO2 Reduction megatrends.The project aims to achieve the following Goals:1. Set the stage for the future extension to 300mm of the R2 Fab facility located in Agrate Brianza (Italy) - i.e. l ...
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10
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TERMINÉ
MOEMS:Micro-Optical MEMS, micro-mirrors and pico-projectors (LAB4MEMS II)
Date du début: 1 juin 2014, Date de fin: 1 juin 2017,
Micro-Optical MEMS, micro-mirrors and pico-projectors.Lab4MEMS II will feature the Pilot Line for innovative technologies on advanced Micro-Opto-Electro-Mechanical Systems (MOEMS). This is not just a special class of MEMS systems in fact, but it deals with MEMS merged with Micro-optics, which involves sensing or manipulating optical signals on a very small size scale, using integrated mechanical, ...
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21
Participants partenaires
TERMINÉ
Technology CAD for III-V Semiconductor-based MOSFETs (III-V-MOS)
Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,
According to ITRS, III-V compound semiconductor n-type MOSFETs will reach production in 2018 as part of a new scaling scenario for high performance at very low voltage. The present lack of dependable TCAD models for the early stages of industrial development is a hindrance to benefit from the cost saves and time to market reduction that TCAD is recognized to deliver. To bridge this gap, III-V-M ...
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11
Participants partenaires
TERMINÉ
Energy Efficient Tunnel FET Switches and Circuits (E2SWITCH)
Date du début: 1 nov. 2013, Date de fin: 30 avr. 2017,
E2SWITCH focuses on Tunnel FET (TFETs) as most promising energy efficient device candidates able to reduce the voltage supply of integrated circuits (ICs) below 0.25V and make them significantly more energy efficient by exploiting strained SiGe/Ge and III-V platforms, with CMOS technological compatibility. A full optimization and DC/AC benchmarking for complementary n- and p-type TFETs, integrated ...
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11
Participants partenaires
TERMINÉ
Radiation Hard Resistive Random-Access Memory (R2RAM)
Date du début: 1 janv. 2015, Date de fin: 31 déc. 2016,
The project aims to realize a strong methodology for the development and design of a radiation hard non-volatile memory technology by using standard CMOS silicon processing. Since standard silicon memories, such as flash memories tend to fail under irradiation, a new approach is envisaged: the development of a specific memory technology, so called resistive random-access memory (RRAM), which is ab ...
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4
Participants partenaires
TERMINÉ
Energy Efficient Converters using GaN Power Devices (E2COGAN)
Date du début: 1 avr. 2013, Date de fin: 31 mars 2016,
The E2COGaN project will target the demonstration of GaN-on-Si as a disruptive power device technology platform through the whole value chain up to demonstrators with high industrial, societal and environmental relevance. Its innovative character will be proven through a well-balanced and application specific trade-off between the “corner” benefits given by higher efficiency, higher switching freq ...
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25
Participants partenaires
TERMINÉ
Graphene-based Devices and Circuits for RF Applications (GRADE)
Date du début: 1 oct. 2012, Date de fin: 31 mars 2016,
Description
Demonstration of the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies
GRADE is a project focusing on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at teraher ...
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13
Participants partenaires
TERMINÉ
LAB FAB for smart sensors and actuators MEMS (LAB4MEMS)
Date du début: 1 janv. 2013, Date de fin: 1 juin 2015,
General GoalsLab4MEMS will feature the Pilot Line for innovative technologies on advanced piezoelectric and magnetic materials, expected to fuel the next generation’s smart sensors and actuators based on MEMS:1. Micro-actuators, micro-pumps, sensors and electrical power generators, integrated on silicon-based piezoelectric materials (PZT) • for use in Data Storage, Ink Jet, Health Care, Automot ...
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21
Participants partenaires
TERMINÉ
ENERGY TO SMART GRID (E2SG)
Date du début: 1 avr. 2012, Date de fin: 1 mars 2015,
The target of the overall E2SG project is to devise and design mechanisms and policies to assemble, monitor and control smart grids, i.e. a set of interconnected nodes whose primary goal is to generate, exchange and consume electrical energy in the most efficient and reliable way by exploiting distributed information that is sensed, transmitted and processed over the same set of nodes and links. F ...
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32
Participants partenaires
TERMINÉ
ENERGY FOR A GREEN SOCIETY: FROM SUSTAINABLE HARVESTING TO SMART DISTRIBUTION. EQUIPMENTS, MATERIALS, DESIGN SOLUTIONS AND THEIR APPLICATIONS (ERG)
Date du début: 1 juin 2011, Date de fin: 1 mai 2014,
The ERG project focus on the solar energy supply chain, starting form photovoltaic cells (PV) and proceeding with energy extraction (harvesting) techniques, high efficiency power conversion and finally managing the energy distribution inside a smart grid, with the target of different classes of applications, from house to small area, as well as application specific “local grid” (healthcare, automo ...
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27
Participants partenaires
TERMINÉ
Steep subthreshold slope switches\nfor energy efficient electronics (STEEPER)
Date du début: 1 juin 2010, Date de fin: 30 nov. 2013,
Description
European Union Research Initiative Aims to Increase
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to ...
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14
Participants partenaires
TERMINÉ
Beyond CMOS Nanodevices for Adding Functionalities\nto CMOS (NANOFUNCTION)
Date du début: 1 sept. 2010, Date de fin: 31 août 2013,
Description
NANOFUNCTION addresses the merging of advanced More than Moore (MtM) devices with Beyond-CMOS. Topics: Si nanowires for sensing, on-chip energy harvesting, nano-cooling and porous Si for RF passives.The NANOFUNCTION project aims to integrate at the European level the excellent European research laboratories in order to strengt ...
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21
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TERMINÉ
Guardian Angels for a Smarter Life (Guardian Angels)
Date du début: 1 mai 2011, Date de fin: 30 avr. 2012,
Guardian Angels (GA) are future zero-power, intelligent, autonomous systems-of-systems featuring sensing, computation, and communication beyond human aptitudes. GA will assist humans from their infancy to old age in complex life situations and environments. Zero-power reflects system-of-systems ability to scavenge energy in dynamic environments by disruptive harvesting techniques. The project prep ...
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34
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TERMINÉ
Nano-scale ICT Devices and Systems Coordination Action (NanoICT)
Date du début: 1 janv. 2008, Date de fin: 31 déc. 2011,
In the semiconductor industry, CMOS technology will certainly continue to have a predominant market position in the future. However, there are still a number of technological challenges, which have to be tackled if CMOS downscaling should be pursued until feature sizes will reach 10 nm around the year 2015-2020.The NanoICT Coordination Action activities will reinforce and support the whole Europea ...
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13
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TERMINÉ
Gigascale Oriented Solid State flAsh Memory for EuRope (GOSSAMER)
Date du début: 1 janv. 2008, Date de fin: 30 juin 2011,
Description
GOSSAMER successfully developed a fully integrated Flash NAND technology based on the TANOS concept, investigating a large number of architecture and material options.
The project aimed at the development of the technology for very high density Non Volatile Memories for mass storage ap ...
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21
Participants partenaires
TERMINÉ
Graphene-based Nanoelectronic Devices (GRAND)
Date du début: 1 janv. 2008, Date de fin: 30 juin 2011,
The semiconductor industry is a cornerstone of today's high-tech economy, supporting over 100,000 direct and even more indirect jobs in Europe. This position has been achieved through continued miniaturization in complementary metal-oxide-semiconductor (CMOS) technology, which will only last for a maximum 10-15 more years. In line with its Lisbon Strategy, the EC has identified an urgent need to a ...
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8
Participants partenaires
TERMINÉ
Silicon-based nanostructures and nanodevices for long term nanoelectronics applications (NANOSIL)
Date du début: 1 janv. 2008, Date de fin: 31 mars 2011,
NANOSIL Network of Excellence aims to integrate at the European level the excellent European research laboratories and capabilities in order to strengthen scientific and technological excellence in the field of nanoelectronic materials and devices for terascale integrated circuits (ICs) and disseminate the results in a wide scientific and industrial community.NANOSIL will explore and assess the sc ...
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