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Nanoelectronics based on two-dimensional dichalcogenides (MoWSeS)

Date du début: 1 mars 2013, Date de fin: 28 févr. 2017,

Semiconductor industry rapidly approaches the performance limits of silicon-based CMOS technology. This proposal aims to pave the wayto electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues ofgraphene. TMDs can be rapidly exfoliated in the liquid phase into single layers starting from powders and provide solutions of 2D materi ...
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