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 TERMINÉ 
DOTSEVEN is a 3.5 year IP proposal for a very ambitious R&D project targeting the development of Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) technologies with cut-off frequencies (fmax) of around 700 GHz. Special attention will be paid to clearly demonstrate the capabilities and benefits of this technology with benchmark circuits and advanced system applications in the 0.1 to ...
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 TERMINÉ 

Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology (DOTFIVE)

Date du début: 1 févr. 2008, Date de fin: 31 juil. 2011,

DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a giv ...
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 20

 TERMINÉ 

Gigascale Oriented Solid State flAsh Memory for EuRope (GOSSAMER)

Date du début: 1 janv. 2008, Date de fin: 30 juin 2011,

Description GOSSAMER successfully developed a fully integrated Flash NAND technology based on the TANOS concept, investigating a large number of architecture and material options. The project aimed at the development of the technology for very high density Non Volatile Memories for mass storage ap ...
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 21

 TERMINÉ 

Integrating the Physical with the Digital World of the Network of the Future (SENSEI)

Date du début: 1 janv. 2008, Date de fin: 31 déc. 2010,

In order to realise the vision of Ambient Intelligence in a future network and service environment, heterogeneous wireless sensor and actuator networks (WS&AN) have to be integrated into a common framework of global scale and made available to services and applications via universal service interfaces. SENSEI creates an open, business driven architecture that fundamentally addresses the scalabilit ...
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